基于异质图注意力的可信参数辨识方法
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1.哈尔滨理工大学测控技术与通信工程学院哈尔滨150080; 2.西澳大学电气电子与计算机工程学院珀斯6009

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TH7

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黑龙江省自然科学基金(LH2023E086)项目资助


A trustworthy parameter identification method based on heterogeneous graph transformer
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1.School of Measurement-Control Technology and Communications Engineering, Harbin University of Science and Technology, Harbin 150080, China; 2.School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth 6009, Australia

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    摘要:

    在电力电子系统中,功率开关器件金属-氧化物-半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)的通态电阻变化是反映器件健康状态与损耗水平、系统运行效率以及可靠性的关键指标。针对现有MOSFET通态电阻参数辨识在复杂耦合工况下精度低、拓扑结构信息利用不足以及模型可解释性弱等问题,提出一种融合柯尔莫哥洛夫-阿诺德网络(Kolmogorov-Arnold networks, KAN)与异质图Transformer(heterogeneous graph transformer, HGT)的两阶段多参数辨识混合模型。首先,基于输出电压信号提取时域统计特征与频域小波包局部能量值,采用皮尔逊相关系数与互信息相结合的联合特征优选策略,筛选高敏感性、低冗余度的特征作为关键特征子集;其次,构建多个并行的KAN子网络,实现各MOSFET通态电阻的初步非线性映射;最后,构建反映电路物理语义的异质图,通过HGT对初步辨识残差进行拓扑感知的结构化补偿,捕获器件非线性特征与系统耦合关系,得到最终的辨识结果。实验结果表明,所提方法在三相空间矢量脉冲调制(SVPWM)整流系统中对MOSFET通态电阻辨识的平均相对误差为0.962%,优于传统神经网络与同质图模型,在硬件实验中辨识的平均相对误差为1.992%,展现出良好的泛化性与鲁棒性。通过沙普利可加性解释(SHAP)分析与注意力可视化验证了特征选择的有效性与模型决策的物理一致性,为电力电子器件的高精度、可解释智能诊断提供了新思路。

    Abstract:

    In power electronic systems, the variation in on-state resistance of the power switching device metal-oxide-semiconductor field-effect transistor (MOSFET) serves as a key indicator reflecting the device′s health condition, power loss level, system operating efficiency, and reliability. To address the problems of low accuracy, insufficient utilization of topological structure information, and weak model interpretability in existing MOSFET on-state resistance parameter identification methods under complex coupling operating conditions, this article proposes a two-stage hybrid model for multi-parameter identification by fusing Kolmogorov-Arnold networks (KAN) and heterogeneous graph Transformer (HGT). Firstly, time-domain statistical features and frequency-domain wavelet packet local energy values are extracted from the output voltage signal. A combined feature optimization strategy based on the Pearson correlation coefficient and mutual information is utilized to select features with high sensitivity and low redundancy as the key feature subset. Secondly, multiple parallel KAN sub-networks are established to realize the preliminary nonlinear mapping of on-state resistance for each MOSFET. Finally, a heterogeneous graph reflecting the physical semantics of the circuit is constructed, and topologyaware structured compensation is performed on the preliminary identification residuals through HGT to capture the nonlinear characteristics of devices and the coupling relationship of the system, so as to obtain the final identification results. Experimental results show that the average relative error of the proposed method for MOSFET on-state resistance identification in the three-phase space vector pulse width modulation (SVPWM) rectifier system is 0.962%, which is superior to traditional neural networks and homogeneous graph models. The average relative error of identification in hardware experiments is 1.992%, showing favorable generalization and robustness. Finally, this article verifies the effectiveness of feature selection and the physical consistency of model decision-making through Shapley additive explanations (SHAP) analysis and attention visualization, which provides a new idea for the high-precision and interpretable intelligent diagnosis of power electronic devices.

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刘金凤,李金枝,Herbert Ho-Ching Iu.基于异质图注意力的可信参数辨识方法[J].仪器仪表学报,2026,47(5):293-306

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  • 在线发布日期: 2026-07-24
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